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RTF010P02
Transistors
DC-DC Converter (-20V, -1.0A)
RTF010P02
Features 1) Low on-resistance. (80m at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) External dimensions (Unit : mm)
TUMT3
0.2
(3)
2.10.1 1.70.1
0 to 0.1
(1) (2)
Applications DC-DC converter
0.2
0.65 0.65 1.30.1
0.170.05 Each lead has same dimensions
Abbreviated symbol : WQ
Structure Silicon P-channel MOS FET
Equivalent circuit
(3)
Packaging specifications
Package Type RTF010P02 Code Basic ordering unit (pieces) Taping TR 3000
(1) 1
2
(2) 1 ESD PROTECTION DIODE 2 BODY DIODE
(1) Gate (2) Source (3) Drain
0.2MAX
0.3 +0.1 -0.05
2.00.1
0.85MAX 0.770.05
1/4
RTF010P02
Transistors
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP 1 IS 1 ISP PD 2 Tch Tstg Limits -20 12 1 4 -0.4 -4 0.8 150 -55 to +150 Unit V V A A A A W C C
Total power dissipation Channel temperature Range of Storage temperature
1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board
Electrical characteristics (Ta=25C)
Parameter Symbol Min. IGSS - Gate-source leakage Drain-source breakdown voltage V(BR) DSS -20 Zero gate voltage drain current - IDSS Gate threshold voltage VGS (th) -0.7 - Static drain-source on-state - RDS (on) resistance - Yfs 0.7 Forward transfer admittance - Ciss Input capacitance - Coss Output capacitance - Reverse transfer capacitance Crss - Turn-on delay time td (on) - Rise time tr - Turn-off delay time td (off) - Fall time tf - Total gate charge Qg - Gate-source charge Qgs Gate-drain charge - Qgd
Pulsed
Typ. - - - - 280 310 570 - 150 20 20 9 8 25 10 2.1 0.5 0.5
Max. 10 - -1 -2.0 390 430 800 - - - - - - - - - - -
Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=12V, VDS=0V ID= -1mA, VGS=0V VDS= -20V, VGS=0V VDS= -10V, ID= -1mA ID= -1A, VGS= -4.5V ID= -1A, VGS= -4V ID= -0.5A, VGS= -2.5V VDS= -10V, ID= -0.5A VDS= -10V VGS=0V f=1MHz ID= -0.5A VDD -15V VGS= -4.5V RL=30 RGS=10 VDD -15V RL 15 VGS= -4.5V RGS=10 ID= -1A
Body diode characteristics (source-drain characteristics) VSD - - -1.2 Forward voltage
V
IS= -0.4A, VGS=0V
2/4
RTF010P02
Transistors
Electrical characteristic curves
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
10 VDS= -10V Pulsed
Ta=125C Ta=75C Ta=25C Ta= -25C
10000 Ta=25C Pulsed
10000
VGS= -4.5V Pulsed
DRAIN CURRENT : -ID (A)
1
0.1
1000
VGS= -2.5V VGS= -4.0V VGS= -4.5V
1000
Ta=125C Ta=75C Ta=25C Ta= -25C
0.01
0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
100 0.01
0.1
1
10
100 0.01
0.1
1
10
GATE-SOURCE VOLTAGE : -VGS (V)
DRAIN CURRENT : -ID (A)
DRAIN CURRENT : -ID (A)
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State Resistance vs. Drain Current
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
REVERSE DRAIN CURRENT : -IS (A)
VGS= -4V Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
10000
10000
VGS= -2.5V Pulsed
10 VGS=0V Pulsed
1000
Ta=125C Ta=75C Ta=25C Ta= -25C
1000
Ta=125C Ta=75C Ta=25C Ta= -25C
1
Ta=125C Ta=75C Ta=25C Ta= -25C
0.1
100 0.01
0.1
1
10
100 0.01
0.1
1
10
0.01 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
DRAIN CURRENT : -ID (A)
DRAIN CURRENT : -ID (A)
SOURCE-DRAIN VOLTAGE : -VSD (V)
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
Fig.6 Reverse Drain Current vs. Source-Drain Voltage
1000
GATE-SOURCE VOLTAGE : -VGS (V)
Ta=25C f=1MHz VGS=0V
10000
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
1000
Ta=25C VDD= -15V VGS= -4.5A RG=10 Pulsed
8 7 6 5 4 3 2 1 0 0 0.5 1 1.5 2
Ta=25C VDD= -15V ID= -1A RG=10 Pulsed
tf
100
Ciss
100
td (off)
10
td (on) tr
Crss Coss
10 0.01
0.1
1
10
100
1 0.01
0.1
1
10
2.5
3
DRAIN-SOURCE VOLTAGE : -VDS (V)
DRAIN CURRENT : -ID (A)
TOTAL GATE CHARGE : Qg (nC)
Fig.7 Typical Capacitance vs. Drain-Source Voltage
Fig.8 Switching Characteristics
Fig.9 Dynamic Input Characteristics
3/4
RTF010P02
Transistors
Measurement circuits
Pulse Width
VGS ID RL D.U.T. RG VDD VDS
VGS
10% 50% 10%
90%
50% 10% 90%
VDS
90% td(on) ton tr td(off) toff
tf
Fig.10 Switching Time Measurement Circuit
Fig.11 Switching Waveforms
VG
VGS ID RL IG(Const.) D.U.T. RG VDD VDS
Qg VGS Qgs Qgd
Charge
Fig.12 Gate Charge Measurement Circuit
Fig.13 Gate Charge Waveforms
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0

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